Enhanced oxygen diffusion in highly doped p-type Czochralski silicon

Boron-oxygen defect imaging in p-type Czochralski silicon

Light-induced boron-oxygen defect generation in compensated p-type Czochralski silicon

Czochralski silicon D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs Department of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Institut für Solarenergieforschung Hameln (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany SINTEF Materials and Chemistry, A. Getz v. 2B, 7465 Tron...

Boron-oxygen defect in Czochralski-silicon co-doped with gallium and boron

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Reassessment of the recombination properties of aluminium-oxygen complexes in n- and p-type Czochralski-grown silicon

The recombination parameters of aluminium–oxygen complexes in silicon have been reassessed by applying lifetime spectroscopy on several nand p-type intentionally Al-contaminated and control samples, using a single-level defect model. The presence of the control samples has allowed greater accuracy for the extraction of the recombination lifetime. The uncertainty ranges of the parameters have be...

Enhanced photocurrents of photosystem I films on p-doped silicon.

Tuning the Fermi energy of silicon through doping leads to alignment of silicon bands with the redox active sites of photosystem I. Integrating photosystem I films with p-doped silicon results in the highest reported photocurrent enhancement for a biohybrid electrode based on photosystem I.